Liquid crystal display device and method for fabricating the same

ABSTRACT

A liquid crystal display device includes gate and data lines defining a pixel region on a first substrate. A first insulating layer covers the gate line and a gate electrode. A thin film transistor, formed at a crossing region of the gate and data lines, has the gate electrode, a semiconductor layer, a source electrode, and a drain electrode. A red, green or blue color filter is formed over the first insulating layer in the pixel region. A drain contact hole exposes the drain electrode. A light-shielding color filter pattern including at least two of red, green and blue resins is formed over the semiconductor layer. A pixel electrode is formed over the color filter in the pixel region and contacts the drain electrode. A common electrode is formed on a second substrate facing the first substrate with a liquid crystal layer interposed between the common and pixel electrodes.

[0001] This application claims the benefit of Korean Application No.P2002-0084611 filed on Dec. 26, 2002, which is hereby incorporated byreference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a liquid crystal display device,and more particularly, to a method for fabricating an array substratehaving color filter patterns on a thin film transistor structure withouta black matrix. Although the present invention is suitable for a widescope of applications, it is particularly suitable for increasing anaperture ratio and simplifying the fabrication process.

[0004] 2. Discussion of the Related Art

[0005] In general, since flat panel display devices are thin, lightweight, and have a low power consumption, they have been used forportable display devices. Among the various types of flat panel displaydevices, liquid crystal display (LCD) devices are widely used for laptopcomputers and desktop computer monitors because of their superiority inresolution, color image display, and display quality.

[0006] Optical anisotropy and polarization characteristics of liquidcrystal molecules are utilized to generate desirable images. Liquidcrystal molecules have specific alignment directions that result fromtheir own peculiar characteristics. The specific alignment directionscan be modified by electric fields that are applied upon the liquidcrystal molecules. In other words, the electric fields applied upon theliquid crystal molecules can change the alignment of the liquid crystalmolecules. Due to the optical anisotropy, the incident light isrefracted according to the alignment of the liquid crystal molecules.

[0007] Specifically, the LCD devices include upper and lower substrateshaving electrodes that are spaced apart and face into each other, and aliquid crystal material is interposed therebetween. Accordingly, when avoltage is applied to the liquid crystal material through the electrodesof each substrate, an alignment direction of the liquid crystalmolecules is changed in accordance with the applied voltage, therebydisplaying images. By controlling the applied voltage, the LCD deviceprovides various light transmittances to display image data.

[0008] The liquid crystal display (LCD) devices are widely applied inoffice automation (OA) and video equipment due to their characteristicssuch as light weight, slim design, and low power consumption. Amongdifferent types of LCD devices, active matrix LCDs (AM-LCDs) having thinfilm transistors and pixel electrodes arranged in a matrix form providehigh resolution and superiority in displaying moving images. A typicalLCD panel has an upper substrate, a lower substrate, and a liquidcrystal layer interposed therebetween. The upper substrate (referred toas a color filter substrate) includes a common electrode and colorfilters. The lower substrate (referred to as an array substrate)includes thin film transistors (TFT's), such as switching elements, andpixel electrodes.

[0009] As previously described, the operation of an LCD device is basedon the principle that the alignment direction of liquid crystalmolecules varies with applied electric fields between the commonelectrode and the pixel electrode. Accordingly, the liquid crystalmolecules function as an optical modulation element having variableoptical characteristics that depend upon the polarity of the appliedvoltage.

[0010]FIG. 1 is an expanded perspective view illustrating a related artactive matrix liquid crystal display device. As shown in FIG. 1, the LCDdevice 11 includes an upper substrate 5 (referred to as a color filtersubstrate) and a lower substrate 22 (referred to as an array substrate)having a liquid crystal layer 14 interposed therebetween. On the uppersubstrate 5, a black matrix 6 and a color filter layer 8 are formed inan array matrix including a plurality of red (R), green (G), and blue(B) color filters surrounded by the black matrix 6. Additionally, acommon electrode 18 is formed on the upper substrate 5 and covers thecolor filter layer 8 and the black matrix 6.

[0011] On the lower substrate 22, a plurality of thin film transistors Tare formed in an array matrix corresponding to the color filter layer 8.A plurality of gate lines 13 and data lines 15 perpendicularly cross oneanother such that each TFT T is located adjacent to each intersection ofthe gate lines 13 and the data lines 15. Furthermore, a plurality ofpixel electrodes 17 are formed on a pixel region P defined by the gatelines 13 and the data lines 15 of the lower substrate 22. The pixelelectrode 17 is formed of a transparent conductive material having hightransmissivity, such as indium tin oxide (ITO) or indium zinc oxide(IZO).

[0012] Still in FIG. 1, a storage capacitor C is disposed to correspondto each pixel P and connected in parallel to each pixel electrode 17.The storage capacitor C is comprised of a portion of the gate line 13 asa first capacitor electrode, a storage metal layer 30 as a secondcapacitor electrode, and an interposed insulator (shown as referencenumeral 16 of FIG. 2). Since the storage metal layer 30 is connected tothe pixel electrode 17 through a contact hole, the storage capacitor Celectrically contacts the pixel electrode 17.

[0013] In the related art LCD device shown in FIG. 1, a scanning signalis applied to the gate electrode of the thin film transistor T throughthe gate line 13, and a data signal is applied to the source electrodeof the thin film transistor T through the data line 15. As a result, theliquid crystal molecules of the liquid crystal material layer 14 arealigned and arranged by the operation of the thin film transistor T, andthe incident light passing through the liquid crystal layer 14 iscontrolled to display an image. Namely, the electric fields inducedbetween the pixel and common electrodes 17 and 18 re-arrange the liquidcrystal molecules of the liquid crystal material layer 14 so that theincident light can be converted into the desired images in accordancewith the induced electric fields.

[0014] When fabricating the LCD device 11 of FIG. 1, the upper substrate5 is aligned with and attached to the lower substrate 22. In thisprocess, the upper substrate 5 may be misaligned with respect to thelower substrate 22, and a light leakage may occur in the completed LCDdevice 11 due to a marginal error in attaching the upper and lowersubstrates 5 and 22.

[0015]FIG. 2 is a schematic cross-sectional view taken along line II-IIof FIG. 1, illustrating a pixel of the related art liquid crystaldisplay device.

[0016] As shown in FIG. 2, the related art LCD device includes the uppersubstrate 5, the lower substrate 22, and the liquid crystal layer 14.The upper and lower substrates 5 and 22 are spaced apart from eachother, and the liquid crystal layer 14 is interposed therebetween. Theupper and lower substrates 5 and 22 are often referred to as a colorfilter substrate and an array substrate, respectively, because the colorfilter layer 8 is formed upon the upper substrate and a plurality ofarray elements are formed on the lower substrate 22.

[0017] In FIG. 2, the thin film transistor T is formed on the frontsurface of the lower substrate 22. The thin film transistor T includes agate electrode 32, an active layer 34, a source electrode 36, and adrain electrode 38. Between the gate electrode 32 and the active layer34, a gate insulation layer 16 is interposed to protect the gateelectrode 32 and the gate line 13. As shown in FIG. 1, the gateelectrode 32 extends from the gate line 13 and the source electrode 36extends from the data line 15. All of the gate, source, and drainelectrodes 32, 36, and 38 are formed of a metallic material while theactive layer 34 is formed of silicon. A passivation layer 40 is formedon the thin film transistor T for protection. In the pixel region P, thepixel electrode 17 formed of a transparent conductive material isdisposed on the passivation layer 40 and contacts the drain electrode 38and the storage metal layer 30.

[0018] Meanwhile, as mentioned above, the gate electrode 13 acts as afirst electrode of the storage capacitor C and the storage metal layer30 acts as a second electrode of the storage capacitor C. Thus, the gateelectrode 13 and the storage metal layer 30 constitute the storagecapacitor C with the interposed gate insulation layer 16.

[0019] Still referring to FIG. 2, the upper substrate 5 is spaced apartfrom the lower substrate 22 over the thin film transistor T. On the rearsurface of the upper substrate 5, a black matrix 6 is disposed in aposition corresponding to the thin film transistor T, the gate line 13and the data line 15. The black matrix 6 is formed on the entire surfaceof the upper substrate 5 and has openings corresponding to the pixelelectrode 17 of the lower substrate 22, as shown in FIG. 1. The blackmatrix 6 prevents a light leakage in the LCD panel except for theportion for the pixel electrode 17. The black matrix 6 protects the thinfilm transistor T from the light such that the black matrix 6 preventsgeneration of a photo-current in the thin film transistor T. The colorfilter layer 8 is formed on the rear surface of the upper substrate 5 tocover the black matrix 6. Each of the color filters 8 has one of the red8 a, green 8 b, and blue 8 b colors and corresponds to one pixel regionP where the pixel electrode 17 is located. A common electrode 18 formedof a transparent conductive material is disposed on the color filterlayer 8 over the upper substrate 5.

[0020] In the related art LCD panel mentioned above, the pixel electrode17 has a one-to-one correspondence with one of the color filters.Furthermore, in order to prevent a cross-talk between the pixelelectrode 17 and the gate and data lines 13 and 15, the pixel electrode17 is spaced apart from the data line 15 by the distance A and from thegate line 13 by the distance B, as shown in FIG. 2. The open spaces Aand B between the pixel electrode 17 and the data and gate line 15 and13 cause a malfunction such as a light leakage in the LCD device.Namely, the light leakage mainly occurs in the open spaces A and B sothat the black matrix 6 formed on the upper substrate 5 should cover theopen spaces A and B. However, when the upper substrate 5 is arrangedwith the lower substrate 22 or vice versa, a misalignment may occurbetween the upper substrate 5 and the lower substrate 22. Therefore, theblack matrix 6 is extended to completely cover the open spaces A and B.That is, the black matrix 6 is designed to provide an aligning margin toprevent light leakage. However, in the case of extending the blackmatrix, an aperture ratio of a liquid crystal panel is reduced as muchas the aligning margin of the black matrix 6. Moreover, if there areerrors in the aligning margin of the black matrix 6, a light leakagestill occurs in the open spaces A and B, and deteriorates the imagequality of an LCD device.

[0021] Moreover, in the related art of FIGS. 1 and 2, the black matrix 6formed on the upper substrate 5 corresponds in position to the thin filmtransistor T and then protects the thin film transistor from externallight incident to the thin film transistor T. Therefore, the blackmatrix 6 prevents the occurrence of photo current that may be caused bythe incident light in the active layer 34 of the thin film transistor T.However, when the misalignment occurs between the upper substrate 5 andthe lower substrate 22, the black matrix 5 may not protect the thin filmtransistor T and the photo current may occur in the active layer of thethin film transistor T, thereby degrading the image quality of theliquid crystal display device.

SUMMARY OF THE INVENTION

[0022] Accordingly, a method for fabricating an array substrate having acolor filter-on-thin film transistor (COT) structure for a liquidcrystal display device is presented (as well as the array substrateitself) that substantially obviates one or more of problems due tolimitations and disadvantages of the related art.

[0023] Thus, embodiments of the present invention provide an arraysubstrate and a method of forming the same, which provide a highaperture ratio.

[0024] One embodiment of the present invention provides a method forfabricating an array substrate having a COT structure for a liquidcrystal display device, which simplifies the manufacturing process andincreases the manufacturing yield.

[0025] Another embodiment of the present invention provides an arraysubstrate and a method of forming the same, which protects a thin filmtransistor using color filter patterns and prevents a photo currentusing the color filter patterns.

[0026] Additional features and advantages of the invention will be setforth in the description which follows and in part will be apparent fromthe description, or may be learned by practice of the invention. Otheradvantages of the invention will be realized and attained by thestructure particularly pointed out in the written description and claimshereof as well as the appended drawings.

[0027] To achieve these and other advantages of the present invention,as embodied and broadly described, a liquid crystal display deviceincludes a plurality of gate lines formed on a first substrate along atransverse direction, each gate line including a gate electrode; a firstinsulating layer formed on the first substrate to cover the gate linesand the gate electrodes; a plurality of data lines formed on the firstinsulating layer along a longitudinal direction, the data lines defininga plurality of pixel regions with the gate lines and each including asource electrode; a thin film transistor formed at a crossing region ofeach of the gate and data lines, each thin film transistor including oneof the gate electrodes, a semiconductor layer, one of the sourceelectrodes, and a drain electrode; a color filter over the firstinsulating layer in each pixel region, each color filter having one ofred, green and blue colors, the color filters having a plurality ofdrain contact holes exposing the drain electrodes; a light-shieldingcolor filer pattern over each thin film transistor, each light-shieldingcolor filter pattern including at least two of red, green and blue colorresins; a pixel electrode over the color filter in each pixel region,each pixel electrode contacting one of the drain electrodes; a commonelectrode on a second substrate, the common electrode facing the firstsubstrate; and a liquid crystal layer interposed between the commonelectrode and the pixel electrodes.

[0028] In another aspect of the present invention, a method offabricating a liquid crystal display device includes forming a pluralityof gate lines on a first substrate along a transverse direction, eachgate line including a gate electrode; forming a first insulating layeron the first substrate to cover the gate lines and the gate electrodes;forming a plurality of data lines on the first insulating layer along alongitudinal direction, the data lines defining a plurality of pixelregions with the gate lines and each including a source electrode;forming a thin film transistor formed at a crossing region of each ofthe gate and data lines, each thin film transistor including one of thegate electrodes, a semiconductor layer, one of the source electrodes,and a drain electrode; forming a color filter over the first insulatinglayer in each pixel region, each color filter having one of red, greenand blue colors and a drain contact hole exposing the drain electrode;forming a light-shielding color filter pattern over each semiconductorlayer, each light-shielding color filter pattern including at least twoof red, green and blue color resins; forming a pixel electrode over thecolor filter in each pixel region, each pixel electrode contacting oneof the drain electrodes; forming a common electrode on a secondsubstrate, the common electrode facing the first substrate; and forminga liquid crystal layer between the common electrode and the pixelelectrodes.

[0029] In another aspect, a method of fabricating an array substrate foruse in a liquid crystal display device includes forming a plurality ofgate lines and a plurality of gate electrodes on a substrate, the gatelines disposed along a transverse direction and the gate electrodesextending from the gate lines; forming a first insulating layer on thesubstrate to cover the gate lines and the gate electrodes; formingactive layers of amorphous silicon and ohmic contact layers of dopedamorphous silicon on the first insulating layer, each active layer andohmic contact layer disposed above one of the gate electrodes; forming aplurality of data lines, a plurality of source electrodes and aplurality of drain electrodes, the data lines defining pixel regionswith the gate lines, wherein the source and drain electrodes contact theohmic contact layers and are spaced apart from each other, and whereinthe source electrodes extend from the data lines, thereby completing athin film transistor at a crossing of each of the gate and data lines;forming a red color filter in a red pixel region and a red color filterpattern over each thin film transistor; forming a green color filter ina green pixel region and a green color filter pattern over each thinfilm transistor; forming a blue color filter in a blue pixel region anda blue color filter pattern over each thin film transistor; and forminga pixel electrode in each of the pixel regions over each of the red,green and blue color filters; wherein forming the red, green and bluecolor filters forms a light-shielding color filter pattern consisting ofat least two of the red, green and blue color filter patterns.

[0030] In another aspect, a liquid crystal display device, comprises: aplurality of gate lines formed on a first substrate along a transversedirection, each gate line including a gate electrode; a first insulatinglayer formed on the first substrate to cover the gate lines and the gateelectrodes; a plurality of data lines formed on the first insulatinglayer along a longitudinal direction, the data lines defining aplurality of pixel regions with the gate lines, each data line includinga source electrode; a plurality of thin film transistors formed at acrossing region of the gate and data lines, the thin film transistorseach including the gate electrode, a semiconductor layer, the sourceelectrode, and a drain electrode; a plurality of pixel electrodes formedon the first substrate in the pixel regions and contacting the drainelectrodes; a common electrode on a second substrate, the commonelectrode facing the first substrate; a liquid crystal layer interposedbetween the common electrode and the pixel electrodes; a plurality ofcolor filters disposed on one of the first and second substrates in thepixel regions, each color filter containing one of red, green and bluecolor resins; and a plurality of light-shielding color filter patternsdisposed on the one of the first and second substrates such that thelight-shielding color filter patterns cover the semiconductor layers toshield the semiconductor layers from incident light, eachlight-shielding color filter pattern including at least two of the red,green and blue color resins disposed sequentially between thesemiconductor layer and the second substrate.

[0031] It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary andexplanatory and are intended to provide further explanation of theinvention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings, which are included to provide afurther understanding of the invention and are incorporated in andconstitute a part of this application, illustrate embodiments of theinvention and together with the description serve to explain theprinciple of the invention.

[0033]FIG. 1 is an expanded perspective view illustrating a related artliquid crystal display device;

[0034]FIG. 2 is a schematic cross-sectional view taken along line II-IIof FIG. 1, illustrating a pixel of the related art liquid crystaldisplay device;

[0035]FIG. 3 is a partially enlarged plane view of an array substratehaving a color filter on a thin film transistor structure according to afirst embodiment of the present invention;

[0036]FIG. 4 is a cross sectional view taken along a line IV-IV of FIG.3 and illustrates an embodiment of a liquid crystal display according tothe present invention;

[0037]FIG. 5 is a cross sectional view and illustrates anotherembodiment of a liquid crystal display according to the presentinvention;

[0038]FIGS. 6A to 6J are cross-sectional views taken along a line IV-IVof FIG. 3, and illustrates the process steps of fabricating the arraysubstrate having a light-shielding color filter pattern according to anembodiment of the present invention;

[0039]FIGS. 7A to 7L are cross-sectional views taken along a line IV-IVof FIG. 3, and illustrates the process steps of fabricating the arraysubstrate having a light-shielding color filter pattern according toanother embodiment of the present invention; and

[0040]FIGS. 8A to 8C are cross-sectional views illustrating the processsteps of fabricating the array substrate having a light-shielding colorfilter pattern according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

[0041] Reference will now be made in detail to the illustratedembodiments of the present invention, examples of which are illustratedin the accompanying drawings. Wherever possible, the same referencenumbers will be used throughout the drawings to refer to the same orlike parts.

[0042]FIG. 3 is a partially enlarged plane view of an array substratehaving a color filter on a thin film transistor structure according to afirst embodiment of the present invention.

[0043] As shown in FIG. 3, an array substrate 100 includes a pluralityof gate lines 116 disposed in a transverse direction and a plurality ofdata lines 126 disposed in a longitudinal direction. The plurality ofgate lines 116 and the plurality of data lines 126 cross one another anddefine pixel regions P. A thin film transistor T is formed at eachintersection of the gate line 116 and the data line 126. The thin filmtransistor T includes a gate electrode 112, an active layer 120, asource electrode 122, and a drain electrode 124. The gate electrode 112extends from the gate line 116 and the source electrode 122 extends fromthe data line 126. The drain electrode 124 is spaced apart from thesource electrode 122 across the gate electrode 112, and the active layer120 having an island shape is disposed between the source electrode 122and the drain electrode 124.

[0044] In the pixel regions P defined by the gate lines and data lines116 and 126, a plurality of color filters 132 a, 132 b, and 132 c arelocated therein. Additionally, a pixel electrode 134 is disposedcorresponding to each pixel region P. The pixel electrode 134 overlapsthe neighboring data lines 126 so that the high aperture ratio can beachieved. Further, the pixel electrode 134 overlaps a portion of thegate line 116 of the previous pixel to contact a storage capacitorC_(ST). The pixel electrode 134 contacts the drain electrode 124 of thethin film transistor T so that it electrically communicates with thethin film transistor T.

[0045] Meanwhile, the storage capacitor C_(ST) is included in a portionof the gate line 116, an insulator (not shown) and a storage metal layer127. Thus, the portion of the gate line 116 acts as a first electrode ofthe storage capacitor C_(ST), and the storage metal layer 127 acts as asecond electrode of the storage capacitor C_(ST). As mentioned above,the pixel electrode 134 electrically contacts the storage metal layer127, so that it is electrically connected to the storage capacitorC_(ST) in parallel.

[0046] The array substrate 100 of FIG. 3 has a color filter-on-thin filmtransistor (COT) structure. In such a COT structure, the color filters132 are formed on the array substrate 100. Furthermore, a black matrixis not formed on the array substrate 100 but light-shielding colorfilter patterns 136 are disposed to correspond to the thin filmtransistors T, so that each light-shielding color filter pattern 136protects the thin film transistor T from incident light and preventsphoto current from being generated in the active layer 120. Although notshown in FIG. 3, each light-shielding color filter pattern 136 containstwo or three layers of colored resin pattern. The thickness of thelight-shielding color filter pattern 136 is almost the same as that ofeach color filter 132. Since the black matrix for preventing incidentlight is not utilized when forming the array substrate 100, the numberof process steps is decreased and process stability is achieved.

[0047]FIG. 4 is a cross sectional view taken along a line IV-IV of FIG.3 and illustrates an embodiment of a liquid crystal display according tothe present invention.

[0048] In FIG. 4, a gate electrode 112 is formed on a first substrate110, and a gate electrode 116 having a first capacitor electrode 114 isalso formed on the first substrate 110. Although not shown in FIG. 4 butshown in FIG. 3, the gate electrode 112 extends from the gate line 116.A gate insulating layer 118 is formed on the substrate to cover the gateelectrode 112, the first capacitor electrode 114 and the gate line 116.An active layer 120 a of amorphous silicon is formed on the gateinsulating layer 118 especially above the gate electrode 112, and anohmic contact layer 120 b of impurity-doped amorphous silicon is formedon the active layer 120 a. Those active layer 120 a and ohmic contactlayer 120 b constitute a semiconductor layer 120. Source and drainelectrodes 122 and 124 are formed to cover the ohmic contact layer 120 bof the semiconductor layer 120. The source and drain electrodes 122 and124 are spaced apart from each other across the gate electrode 112. Thesource electrode 122 is connected to a data line 126 that define a pixelregion P with the gate line 116. Over the first capacitor electrode 114,a second capacitor electrode 128 that has an island shape is formed. Thefirst capacitor electrode 114 and the second capacitor electrode 128form a storage capacitor C_(ST) with the interposed gate insulatinglayer 118.

[0049] Between the source and drain electrodes 122 and 124, a portion ofthe ohmic contact layer 120 b is etched out so that a channel ch isformed on an exposed portion of the active layer 120 a. The gateelectrode 112, the semiconductor layer 120, the source and drainelectrode 122 and 124 constitute a thin film transistor T. A colorfilter layer 132 having red (R) 132 a, green (G) 132 b and blue (B) 132c colors are formed in the pixel region P. Namely, the red (R) 132 a,green (G) 132 b and blue (B) 132 c color filters are disposedrespectively in a red pixel region P_(r), a green pixel region P_(g) anda blue pixel region P_(b). The color filter layer 132 has a draincontact hole 130 that exposes a portion of the drain electrode 124.Furthermore, the color filter layer 132 has a capacitor contact hole 131that exposes a portion of the second capacitor electrode 128. A pixelelectrode 134 is formed on each color filter 132 a, 132 b or 132 c, anddisposed within each pixel region P_(r), P_(g) or P_(b). The pixelelectrode 134 contacts the drain electrode 124 and the second capacitorelectrode 128, respectively, through the drain contact hole 130 andthrough the capacitor contact hole 131.

[0050] Meanwhile, a light-shielding color filter pattern 136 is disposedon the thin film transistor T. The light-shielding color filter pattern136 contains red, green and blue color filter patterns 136 a, 136 b and136 c that are sequentially layered on the thin film transistor T. Thered color filter pattern 136 a is formed with the red color filter 132a, the green color filter pattern 136 b is formed with the green colorfilter 132 b, and the blue color filter pattern 136 c is formed with theblue color filter 132 c. In FIG. 4, the red color filter pattern 136 ais formed as one united body with the neighboring red color filter 132a, and the blue color filter pattern 136 c is also formed as one unitedbody with the neighboring blue color filter 132 c.

[0051] Still in FIG. 4, a second substrate 150 is disposed spaced apartfrom and facing the first substrate 110. On a rear surface of the secondsubstrate 150, a common electrode 152 is formed. A liquid crystal layer170 is interposed between the first and second substrates 110 and 150.The thickness of the liquid crystal layer 170 is called the cell gap.

[0052] In FIG. 4, the light-shielding color filter patterns 136 havethree color filter patterns 136 a, 136 b and 136 c and protect the thinfilm transistor T from incident light. When forming the color filters132 a, 132 b and 132 c, the light-shielding color filter pattern 136 isalso formed. Thus, the black matrix that prevents the light incident tothe thin film transistor is not required. Since the light-shieldingcolor filter pattern 136, which prevents incident light in a mannersimilar to that of a black matrix, is formed with the color filter layer132, the number of process steps can be reduced.

[0053] The thickness of the light-shielding color filter pattern 136 isthe same as or less than the thickness of each color filter 132 that isin each pixel region P_(r), P_(g) or P_(b). Moreover, the thickness ofthe light-shielding color filter pattern 136 is adjusted using adiffraction exposure method during the fabrication process. If thethickness of the red, green and blue color filters 132 a, 132 b and 132c are denoted by T_(R), T_(G) and T_(B) and if the thickness of the red,green and blue color filter patterns 136 a, 136 b and 136 c are denotedby T_(r), T_(g) and T_(b), the relationship between the color filters132 and the color filter patterns 136 can be represented by thefollowing inequalities.

T_(r)<T_(R), T_(g)≦T_(G) and T_(b)≦T_(B)

T_(g)<T_(G), T_(r)≦T_(R) and T_(b)≦T_(B)

T_(b)<T_(B), T_(g)≦T_(G) and T_(r)≦T_(R)

[0054] Furthermore, if the cell gap between the light-shielding colorfilter pattern 136 and the common electrode 152 is denoted by C_(t), thecell gap should be greater than zero, i.e., C_(t)>0.

[0055] When the red, green and blue color filters 132 a, 132 b and 132 care sequentially formed, the accumulation order of red, green and bluecolor filter patterns 136 a, 136 b and 136 c can be applied to all ofthe array substrate.

[0056]FIG. 5 is a cross sectional view that illustrates anotherembodiment of a liquid crystal display according to the presentinvention. In FIG. 5, the light-shielding color filter pattern hasdifferent structure and configuration than that shown in FIG. 4. Sincethe liquid crystal display of FIG. 5 is similar to that of FIG. 4, someexplanation will be omitted hereinafter.

[0057] In FIG. 5, a thin film transistor T having a gate electrode 212,a semiconductor layer 220, a source electrode 222 and a drain electrode224 is formed on a first substrate 210. Further, a storage capacitorC_(ST) having a first capacitor electrode 214, a gate insulating layer218 and a second capacitor electrode 228 is also formed on the firstsubstrate 210. Red, green and blue color filters 232 a, 232 b and 232 care also formed in the pixel regions P over the storage capacitor C_(ST)and the thin film transistor T. The color filter layer 232 has a draincontact hole 230 exposing a portion of the drain electrode 224 and acapacitor contact hole 232 exposing a portion of the second capacitorelectrode 228. A pixel electrode 234 is formed on each of color filter232 a, 232 b or 232 c and contacts the drain electrode 224 and thesecond capacitor electrode 228, respectively, through the drain contacthole 230 and through the capacitor contact hole 231.

[0058] Meanwhile, a second substrate 250 is spaced apart from the firstsubstrate 210. A common electrode 252 is formed on a rear surface of thesecond substrate 250. A liquid crystal layer 270 is interposed betweenthe pixel electrode 234 and the common electrode 252.

[0059] A light-shielding color filter pattern 236 having a red colorfilter pattern 236 a and a blue color filter pattern 236 b is formedright above the thin film transistor T. Unlike the light-shielding colorfilter pattern 136 of FIG. 4, the light-shielding color filter pattern236 of FIG. 5 has two-layered color filter patterns 236 a and 236 b.Moreover, the color filter patterns 236 a and 236 b can be red and greenor green and blue. The red, green and blue color filters 232 a, 232 band 232 c are formed throughout a photolithography process usingphotosensitive resins. Therefore, the red color filter pattern 236 a isformed when forming the red color filter 232 a and the blue color filterpattern 236 b is formed when forming the blue color filter 232 c. Asshown in the embodiment illustrated in FIG. 5, when forming the greencolor filter 232 b, no color filter pattern is formed over the thin filmtransistor T.

[0060] If the thickness of the red, green and blue color filters 232 a,232 b and 232 c are denoted by T_(R), T_(G) and T_(B) and if thethickness of the red and blue color filter patterns 236 a and 236 b aredenoted by T_(r) and T_(b), the relationship between the color filters232 and the color filter patterns 236 can be represented by thefollowing inequalities.

T_(r)<T_(R), and/or T_(b)≦T_(B)

T_(r)≦T_(R) and/or T_(b)≦T_(B)

T_(b)<T_(B) and/or T_(r)≦T_(R)

[0061] Furthermore, if the cell gap between the light-shielding colorfilter pattern 236 and the common electrode 252 is denoted by C_(t), thecell gap C_(t) should be greater than zero, i.e., C_(t)>0.

[0062] In order to form the red and blue color filter patterns 236 a and236 b to have relatively small thickness T_(r) and T_(b), a diffractionexposure method that decreases the dose of light irradiation isadvantageously used.

[0063] It is possible that an additional insulator is interposed betweenthe thin film transistor and the color filter layer. When forming theadditional insulator, the additional insulator should have a draincontact hole exposing the drain electrode and a capacitor contact holeexposing the second capacitor electrode, whereas the pixel electrodeelectrically contacts with the thin film transistor and the storagecapacitor.

[0064]FIGS. 6A to 6J are cross-sectional views taken along a line IV-IVof FIG. 3, and illustrates the process steps of fabricating the arraysubstrate having a light-shielding color filter pattern according to anembodiment of the present invention.

[0065] In FIG. 6A, a first metal layer is deposited on the surface of asubstrate 110, and then patterned to form a gate line 116 and a gateelectrode 112. As described herein before, a portion of the gate line116 acts as a first capacitor electrode 114 that constitutes a storagecapacitor with a later-formed second capacitor electrode.

[0066] In FIG. 6B, a gate insulating layer 118 (a first insulatinglayer) is formed on the substrate 110 to cover the gate line 116 and thegate electrode 112. The gate insulation layer 118 is formed of aninorganic material, such as silicon nitride (SiN_(X)) and silicon oxide(SiO₂). An intrinsic amorphous silicon layer (a-Si:H) and then ann⁺-doped amorphous silicon layer (n⁺a-Si:H) are sequentially depositedon the entire surface of the gate insulation layer 118 and thensimultaneously patterned through a mask process to form an active layer120 a and an ohmic contact layer 120 b. The active layer 120 a islocated above the gate electrode 112, and the ohmic contact layer 120 bis then located on the active layer 120 a. The active layer 120 a andthe ohmic contact layer 120 b constitute a semiconductor layer 120.

[0067] In FIG. 6C, after forming the active layer 120 a and the ohmiccontact layer 120 b, a second metal layer is deposited over thesubstrate 110, and then patterned through a mask process to form asource electrode 122, a drain electrode 124, a data line 126, and asecond capacitor electrode 128. The second metal layer may be formed ofone of chromium (Cr), copper (Cu), molybdenum (Mo), and an alloy of anycombination thereof. The source electrode 122 extends from the data line126 and contacts one portion of the ohmic contact layer 120 a. The drainelectrode 124 is spaced apart from the source electrode 122 and contactsthe other portion of the ohmic contact layer 120 a. The second capacitorelectrode 128 overlaps a portion of the gate line 116 so that theoverlapped portion of the gate line 116 becomes the first secondcapacitor electrode 128. Thereafter, a portion of the ohmic contactlayer 120 b between the source and drain electrodes 122 and 124 isetched to exposed the active layer 120 a by using the source and drainelectrodes 122 and 124 as masks, whereas a thin film transistor T and astorage capacitor C_(ST) are complete. As described with reference toFIGS. 3 and 4, the thin film transistor T is comprised of the gateelectrode 112, the semiconductor layer 120, the source electrode 122,and the drain electrode 124. And the storage capacitor C_(ST) iscomprised of the portion of the gate line 116, the second metal layer128, and the interposed first insulating layer 118.

[0068] In FIG. 6D, a red color resin 132R is formed over the entiresurface of the substrate 110 to cover the thin film transistor T, thestorage capacitor C_(ST), and the data line 126. Thereafter, a firstmask Ma is disposed over the substrate 110 to pattern the red colorresin 132R. The first mask Ma has transmitting portions M1, shieldingportions M2 and half-transmitting portions M3. The transmitting portionsM1 allow the light to fully pass through and correspond to the pixelregion P except for the portions for thin film transistor region T.Especially in this process of patterning the red color resin 132R, thetransmitting portions M1 correspond to the red pixel region P_(r). Theshielding portion M2 thoroughly blocks the light during this maskprocess and corresponds to the other green and blue pixel regions P_(g)and P_(b). The half-transmitting portion M3 includes a plurality ofslits or a semitransparent film so that only a portion of the light canpass through. The half-transmitting portion M3 corresponds to the gateelectrode 112, especially to the exposed portion of the active layer 120a.

[0069] After the light irradiation through the first mask Ma as shown inFIG. 6D, the red color resin 132R is developed so that a red colorfilter 132 a and a red color filter pattern 136 a are left over thesubstrate 110. As shown in FIG. 6E, the red color filter 132 acorresponds to the red pixel region P_(r) and has a drain contact hole130 that exposes a portion of the drain electrode 124. Although notshown in FIG. 6E, the red color filter 132 a has a capacitor contacthole that exposes a second capacitor electrode corresponding to the redpixel region P_(r). Additionally, the red color filter pattern 136 a isdisposed above the gate electrode 112 especially on the exposed potionof the active layer 120 a.

[0070] Now in FIG. 6F, after forming the red color filter 132 a and thered color filter pattern 136 a, a green color resin 132G is formed overthe entire surface of the substrate 110, and then a second mask Mb isdisposed over the substrate 110 for patterning the green color resin132G. Similar to the first mask Ma, the second mask Mb has transmittingportions M4 corresponding to the green pixel region P_(g), shieldingportions M5 corresponding to the other red and blue pixel regions P_(r)and P_(b), and half-transmitting portions M6 corresponding to theexposed portion of the active layer 120 a. A shielding portion M5 alsocorresponds to the second capacitor electrode 128. After disposing thesecond mask Mb over the green color resin 132G, the light irradiation isperformed through the second mask Mb for patterning the green colorresin 132G.

[0071] After the light irradiation through the second mask Mb, the greencolor resin 132G is developed. Therefore, as shown in FIG. 6G, a greencolor filter 132 b is formed to be disposed in the green pixel regionP_(g), and a green color filter pattern 136 b is also formed on the redcolor filter pattern 136 a. Meanwhile, at this time of developing thegreen color resin 132G, the green color filter 132 b is formed to have acapacitor contact hole 131 that exposes a portion of the secondcapacitor electrode 128. Furthermore, although not shown in FIG. 6G, adrain contact hole that exposes a drain electrode of the thin filmtransistor corresponding to the green pixel region P_(g) is also formed.

[0072] Next in FIG. 6H, a blue color resin 132B is formed over theentire surface of the substrate 110, and then a third mask is disposedover the substrate 110 for patterning the blue color resin 132B.Similarly to the first and second masks Ma and Mb, the third mask Mc hastransmitting portions M7 corresponding to the blue pixel region P_(b),shielding portions M8 corresponding to the other red and green pixelregions P_(r) and P_(g), and half-transmitting portions M9 correspondingto the active layer 120 a. Although not shown in FIG. 6H, a shieldingportion M5 also corresponds to the second capacitor electrode 128corresponding to the blue pixel region P_(b). After disposing the thirdmask Mc over the blue color resin 132B, the light irradiation isperformed through the third mask Mc for patterning the blue color resin132B.

[0073] After the light irradiation through the third mask Mc, the bluecolor resin 132B is developed. Therefore, as shown in FIG. 6I, a bluecolor filter 132 c is formed to be disposed in the blue pixel regionP_(b), and a blue color filter pattern 136 c is also formed on the greencolor filter pattern 136 b. Although not shown in FIG. 6I, developingthe blue color resin 132B forms the blue color filter 132 c to have acapacitor contact hole that exposes a portion of a corresponding secondcapacitor electrode and a drain contact hole that exposes a portion of acorresponding drain electrode. Accordingly, the color filter layer 132is complete as shown in FIG. 6I.

[0074]FIG. 6J shows the step of forming a pixel electrode 134. Atransparent electrode layer of indium tin oxide (ITO) or indium zincoxide (IZO) is deposited over the entire surface of the substrate 100 tocover the color filter layer 132 and contacts the exposed portions ofthe drain electrode 124 and the second capacitor electrode 128.Thereafter, the transparent electrode layer is patterned through a maskprocess, so that the pixel electrode 134 is formed to correspond to eachpixel region P_(r), P_(g) or P_(b). As shown in FIG. 6J, the pixelelectrode 134 contacts the drain electrode 134 and the second capacitorelectrode 128.

[0075]FIGS. 7A to 7L are cross-sectional views taken along a line IV-IVof FIG. 3, and illustrates the process steps of fabricating the arraysubstrate having a light-shielding color filter pattern according toanother embodiment of the present invention.

[0076]FIGS. 7A to 7C are the same as FIGS. 6A to 6C so that somedetailed explanations are omitted hereinafter.

[0077] In FIG. 7D, a second insulating layer 129 is deposited over theentire surface of the substrate 110 to cover the patterned second metallayer. Namely, the second insulating layer 129 covers and protects thethin film transistor T, the gate line 126 and the storage capacitorC_(ST). The second insulating layer 129 may be formed of silicon nitride(SiN_(X)) or silicon oxide (SiO₂). The second insulating layer 129enhances the adhesion of an organic layer to be formed in the nextprocess. In other words, the second insulating layer 129 improves theadhesion between the active layer 120 a and the later-formed colorfilter layer.

[0078] After forming the second insulating layer 129, a red color resin132R is formed on the second insulating layer 129 as shown in FIG. 7E. Afirst mask Ma is then disposed over the substrate 110 to pattern the redcolor resin 132R. The first mask Ma has transmitting portions M1,shielding portions M2 and half-transmitting portions M3. Thetransmitting portions M1 allow the light to fully pass through andcorrespond to the pixel region P except for the portions for thin filmtransistor region T. Especially in this process of patterning the redcolor resin 132R, the transmitting portions M1 correspond to the redpixel region P_(r). The shielding portion M2 thoroughly blocks the lightduring this mask process and corresponds to the other green and bluepixel regions P_(g) and P_(b). The half-transmitting portion M3 includesa plurality of slits or a semitransparent film so that only a portion ofthe light can pass through. The half-transmitting portion M3 correspondsto the gate electrode 112, especially to the exposed portion of theactive layer 120 a.

[0079] After the light irradiation through the first mask Ma of FIG. 7E,the red color resin 132R is developed so that a red color filter 132 aand a red color filter pattern 136 a are left on the second insulatinglayer 129. As shown in FIG. 7F, the red color filter 132 a correspondsto the red pixel region P_(r) and has a drain contact hole 130 thatcorresponds to the drain electrode 124. Although not shown in FIG. 7F,the red color filter 132 a also has a capacitor contact hole thatcorresponds to a second capacitor electrode corresponding to the redpixel region P_(r). Additionally, the red color filter pattern 136 a isdisposed on the second insulating layer especially above the gateelectrode 112.

[0080] Now in FIG. 7G, after forming the red color filter 132 a and thered color filter pattern 136 a, a green color resin 132G is formed overthe entire surface of the substrate 110 especially on the secondinsulating layer 129, and then a second mask Mb is disposed over thesubstrate 110 for patterning the green color resin 132G. Similar to thefirst mask Ma, the second mask Mb has transmitting portions M4corresponding to the green pixel region P_(g), shielding portions M5corresponding to the other red and blue pixel regions P_(r) and P_(b),and half-transmitting portions M6 corresponding to the active layer 120a. A shielding portion M5 also corresponds to the second capacitorelectrode 128. After disposing the second mask Mb over the green colorresin 132G, the light irradiation is performed through the second maskMb for patterning the green color resin 132G.

[0081] After the light irradiation through the second mask Mb, the greencolor resin 132G is developed. Therefore, as shown in FIG. 7H, a greencolor filter 132 b is formed on the second insulating layer 129 tocorrespond to the green pixel region P_(g), and a green color filterpattern 136 b is also formed on the red color filter pattern 136 a.Meanwhile, when developing the green color resin 132G, the green colorfilter 132 b is formed to have a capacitor contact hole 131 thatcorresponds to the second capacitor electrode 128. Furthermore, althoughnot shown in FIG. 7H, a drain contact hole that corresponds to a drainelectrode of the thin film transistor corresponding to the green pixelregion P_(g) is also formed.

[0082] Next in FIG. 7I, a blue color resin 132B is formed over theentire surface of the substrate 110 especially on the second insulatinglayer 129, and then a third mask Mc is disposed over the substrate 110for patterning the blue color resin 132B. Similar to the first andsecond masks Ma and Mb, the third mask Mc has transmitting portions M7corresponding to the blue pixel region P_(b), shielding portions M8corresponding to the other red and green pixel regions P_(r) and P_(g),and half-transmitting portions M9 corresponding to the active layer 120a. Although not shown in FIG. 7I, a shielding portion M5 alsocorresponds to the second capacitor electrode corresponding to the bluepixel region P_(b). After disposing the third mask Mc over the bluecolor resin 132B, the light irradiation is performed through the thirdmask Mc for patterning the blue color resin 132B.

[0083] After the light irradiation through the third mask Mc, the bluecolor resin 132B is developed. Therefore, as shown in FIG. 7J, a bluecolor filter 132 c is formed to be disposed in the blue pixel regionP_(b), and a blue color filter pattern 136 c is also formed on the greencolor filter pattern 136 b. Meanwhile, although not shown in FIG. 7J,developing the blue color resin 132B forms the blue color filter 132 cto have a capacitor contact hole corresponding to a corresponding secondcapacitor electrode and a drain contact hole corresponding to acorresponding drain electrode. Accordingly, the color filter layer 132is complete as shown in FIG. 6J.

[0084] After completing the color filter layer 132, the drain contacthole 130 and the capacitor contact hole 131 extend to the underlyingmetal layer. As shown in FIG. 7K, exposed portions of the secondinsulating layer 129 are etched so that the drain and capacitor contactholes 130 and 131 extend to the underlying drain electrode 124 andsecond capacitor electrode 128, respectively. The drain contact hole 130exposes a portion of the drain electrode 124, and the capacitor contacthole 131 exposes a portion of the second capacitor electrode 128.

[0085]FIG. 7L shows the step of forming a pixel electrode 134. Atransparent electrode layer of indium tin oxide (ITO) or indium zincoxide (IZO) is deposited over the entire surface of the substrate 100 tocover the color filter layer 132 and to contact the exposed portions ofthe drain electrode 124 and the second capacitor electrode 128.Thereafter, the transparent electrode layer is patterned through a maskprocess, so that the pixel electrode 134 is formed to correspond to eachof the pixel regions P_(r), P_(g) and P_(b). As shown in FIG. 7L, thepixel electrode 134 contacts the drain electrode 134 and the secondcapacitor electrode 128, respectively, through the drain contact hole130 and the capacitor contact hole 131.

[0086]FIGS. 8A to 8C are cross-sectional views illustrating the processsteps of fabricating the array substrate having a light-shielding colorfilter pattern according to another embodiment of the present invention.FIGS. 8A to 8C shows the fabrication processes after the process step ofFIG. 7J because the previous process steps are the same as FIGS. 7A to7J. Accordingly the detailed explanations until forming the color filterlayer are omitted hereinafter.

[0087] In FIG. 8A, a third insulating layer 133 is formed over theentire surface of the substrate 110 to cover the color layer 132 and thelight-shielding color filter pattern 136. The third insulating layer 133may be an inorganic material, such as silicon nitride (SiN_(X)) orsilicon oxide (SiO₂).

[0088] Thereafter as shown in FIG. 8B, exposed portions of the secondinsulating layer 129 are etched so that the drain and capacitor contactholes 130 and 131 extend to the underlying drain electrode 124 andsecond capacitor electrode 128, respectively. The drain contact hole 130exposes a portion of the drain electrode 124, and the capacitor contacthole 131 exposes a portion of the second capacitor electrode 128.

[0089]FIG. 8C shows the step of forming a pixel electrode 134. Atransparent electrode layer of indium tin oxide (ITO) or indium zincoxide (IZO) is deposited over the entire surface of the substrate 100 tocover the patterned third insulating layer 133 and to contact theexposed portions of the drain electrode 124 and the second capacitorelectrode 128. Thereafter, the transparent electrode layer is patternedthrough a mask process, so that the pixel electrode 134 is formed tocorrespond to each of the pixel regions P_(r), P_(g) and P_(b). As shownin FIG. 8C, the pixel electrode 134 contacts the drain electrode 134 andthe second capacitor electrode 128, respectively, through the expandeddrain contact hole 130 and the expanded capacitor contact hole 131.

[0090] As mentioned before, since the array substrate in the embodimentsof the present invention substitutes a light-shielding color filterpattern for a black matrix, it is possible to simplify the fabricationprocess and reduce the production cost. Furthermore, since the colorfilter layer is formed in the array substrate, it is not required toconsider an aligning margin when designing and aligning the lower andupper substrates, thereby increasing the aperture ratio.

[0091] It will be apparent to those skilled in the art that variousmodifications and variations can be made in the method for fabricatingthe array substrate having color filter patterns on a thin filmtransistor structure for the liquid crystal display device of thepresent invention without departing from the spirit or scope of theinventions. Thus, it is intended that the present invention covers themodifications and variations of this invention provided they come withinthe scope of the appended claims and their equivalents.

What is claimed is:
 1. A liquid crystal display device, comprising: aplurality of gate lines formed on a first substrate along a transversedirection, each gate line including a gate electrode; a first insulatinglayer formed on the first substrate to cover the gate lines and the gateelectrodes; a plurality of data lines formed on the first insulatinglayer along a longitudinal direction, the data lines defining aplurality of pixel regions with the gate lines and each including asource electrode; a thin film transistor formed at a crossing region ofeach of the gate and data lines, each thin film transistor including oneof the gate electrodes, a semiconductor layer, one of the sourceelectrodes, and a drain electrode; a color filter over the firstinsulating layer in each pixel region, each color filter having one ofred, green and blue colors, the color filters having a plurality ofdrain contact holes exposing the drain electrodes; a light-shieldingcolor filer pattern over each thin film transistor, each light-shieldingcolor filter pattern including at least two of red, green and blue colorresins; a pixel electrode over the color filter in each pixel region,each pixel electrode contacting one of the drain electrodes; a commonelectrode on a second substrate, the common electrode facing the firstsubstrate; and a liquid crystal layer interposed between the commonelectrode and the pixel electrodes.
 2. The device according to claim 1,wherein each semiconductor layer includes an active layer of amorphoussilicon and an ohmic contact layer of doped amorphous silicon.
 3. Thedevice according to claim 2, wherein the source and drain electrodes areformed on the ohmic contact layer and spaced apart from each other. 4.The device according to claim 2, wherein each thin film transistorincludes a channel on the active layer between the source and drainelectrodes.
 5. The device according to claim 1, wherein thelight-shielding color filter patterns are formed of the same material asthe color filters.
 6. The device according to claim 1, wherein a cellgap between the light-shielding color filter patterns and the pixelelectrodes is greater than zero.
 7. The device according to claim 1,wherein the color filters are formed of a photosensitive resin through aphotolithography process.
 8. The device according to claim 1, whereinred, green and blue color filters are formed sequentially from thesemiconductor layers towards the liquid crystal layer.
 9. The deviceaccording to claim 1, wherein each of red, green and blue color filterpatterns has a thickness smaller than each of red, green and blue colorfilters.
 10. The device according to claim 1, wherein eachlight-shielding color filter pattern has a red color filter pattern, agreen color filter pattern and a blue color filter pattern.
 11. Thedevice according to claim 1, further comprising a second insulatinglayer between the thin film transistors and the light-shielding patternsand between the first insulating layer and the color filters, whereinthe second insulating layer covers the source electrodes, the drainelectrodes and the data lines and wherein the drain contact holes extendthrough the second insulating layer.
 12. The device according to claim1, further comprising a third insulating layer between the color filtersand the pixel electrodes, wherein the third insulating layer covers thecolor filters and the light-shielding color filter patterns.
 13. Thedevice according to claim 1, wherein a portion of each gate line acts asa first capacitor electrode.
 14. The device according to claim 13,further comprising a second capacitor electrode on the first insulatinglayer over each portion of the gate line.
 15. The device according toclaim 14, wherein each second capacitor electrode and portion of thegate line constitute a storage capacitor with the first insulating layerinterposed between the portion of the gate line and the second capacitorelectrode.
 16. The device according to claim 15, wherein each colorfilter includes a capacitor contact hole exposing the second capacitorelectrode.
 17. The device according to claim 16, wherein the pixelelectrodes contact the second capacitor electrodes through the capacitorcontact holes.
 18. A method of fabricating a liquid crystal displaydevice, comprising: forming a plurality of gate lines on a firstsubstrate along a transverse direction, each gate line including a gateelectrode; forming a first insulating layer on the first substrate tocover the gate lines and the gate electrodes; forming a plurality ofdata lines on the first insulating layer along a longitudinal direction,the data lines defining a plurality of pixel regions with the gate linesand each including a source electrode; forming a thin film transistorformed at a crossing region of each of the gate and data lines, eachthin film transistor including one of the gate electrodes, asemiconductor layer, one of the source electrodes, and a drainelectrode; forming a color filter over the first insulating layer ineach pixel region, each color filter having one of red, green and bluecolors and a drain contact hole exposing the drain electrode; forming alight-shielding color filter pattern over each semiconductor layer, eachlight-shielding color filter pattern including at least two of red,green and blue color resins; forming a pixel electrode over the colorfilter in each pixel region, each pixel electrode contacting one of thedrain electrodes; forming a common electrode on a second substrate, thecommon electrode facing the first substrate; and forming a liquidcrystal layer between the common electrode and the pixel electrodes. 19.The method according to claim 18, wherein each semiconductor layerincludes an active layer of amorphous and an ohmic contact layer ofdoped amorphous silicon.
 20. The method according to claim 19, whereinthe source and drain electrodes are formed on the ohmic contact layerand spaced apart from each other.
 21. The method according to claim 19,wherein forming each thin film transistor includes forming a channel onthe active layer between the source and drain electrodes.
 22. The methodaccording to claim 18, wherein forming the light-shielding color filterpatterns includes forming the light-shielding color filter patterns atthe same time and using the same material as the color filters.
 23. Themethod according to claim 18, wherein forming the liquid crystal layerincludes forming a cell gap that is greater than zero between thelight-shielding color filters pattern and the pixel electrodes.
 24. Themethod according to claim 18, wherein each color filter is formed of aphotosensitive resin through a photolithography process.
 25. The methodaccording to claim 18, wherein forming each color filter includesforming red, green and blue color filters sequentially from thesemiconductor layers towards the liquid crystal layer.
 26. The methodaccording to claim 25, wherein forming each light-shielding color filterpattern includes forming red, green and blue color filter patterns usinga diffraction exposure method such that the red, green and blue colorfilter patterns have a thickness smaller than each of the red, green andblue color filters.
 27. The method according to claim 18, wherein eachlight-shielding color filter pattern has a red color filter pattern, agreen color filter pattern and a blue color filter pattern.
 28. Themethod according to claim 18, further comprising forming a secondinsulating layer between the thin film transistors and thelight-shielding patterns and between the first insulating layer and thecolor filters, wherein the second insulating layer covers the sourceelectrodes, the drain electrodes and the data lines.
 29. The methodaccording to claim 28, further comprising etching an exposed portion ofthe second insulating layer such that the drain contact holes extendthrough the second insulating layer to expose a portion of each drainelectrode.
 30. The method according to claim 18, further comprisingforming a third insulating layer between the color filters and the pixelelectrodes, wherein the third insulating layer covers the color filtersand the light-shielding color filter patterns.
 31. The method accordingto claim 30, further comprising etching a portion of the thirdinsulating layer corresponding to the drain contact holes such that thedrain contact holes extend through the third insulating layer to exposea portion of each drain electrode.
 32. The method according to claim 18,wherein a portion of each gate line acts as a first capacitor electrode.33. The method according to claim 32, further comprising forming asecond capacitor electrode on the first insulating layer over eachportion of the gate line, wherein the second capacitor electrode and theportion of the gate line constitute a storage capacitor with the firstinsulating layer interposed between the portion of the gate line and thesecond capacitor electrode.
 34. The method according to claim 33,wherein each color filter includes a capacitor contact hole exposing oneof the second capacitor electrodes and wherein the pixel electrodescontacts the second capacitor electrodes through the capacitor contactholes.
 35. A method of fabricating an array substrate for use in aliquid crystal display device, comprising: forming a plurality of gatelines and a plurality of gate electrodes on a substrate, the gate linesdisposed along a transverse direction and the gate electrodes extendingfrom the gate lines; forming a first insulating layer on the substrateto cover the gate lines and the gate electrodes; forming active layersof amorphous silicon and ohmic contact layers of doped amorphous siliconon the first insulating layer, each active layer and ohmic contact layerdisposed above one of the gate electrodes; forming a plurality of datalines, a plurality of source electrodes and a plurality of drainelectrodes, the data lines defining pixel regions with the gate lines,wherein the source and drain electrodes contact the ohmic contact layersand are spaced apart from each other, and wherein the source electrodesextend from the data lines, thereby completing a thin film transistor ata crossing of each of the gate and data lines; forming a red colorfilter in a red pixel region and a red color filter pattern over eachthin film transistor; forming a green color filter in a green pixelregion and a green color filter pattern over each thin film transistor;forming a blue color filter in a blue pixel region and a blue colorfilter pattern over each thin film transistor; and forming a pixelelectrode in each of the pixel regions over each of the red, green andblue color filters; wherein forming the red, green and blue colorfilters forms a light-shielding color filter pattern consisting of atleast two of the red, green and blue color filter patterns.
 36. Themethod according to claim 35, wherein forming the active layers and theohmic contact layers includes forming a channel on each active layerbetween the source and drain electrodes.
 37. The method according toclaim 35, wherein each light-shielding color filter consists of the red,green and blue color filter patterns disposed sequentially from thesemiconductor layer towards the liquid crystal layer.
 38. The methodaccording to claim 35, wherein forming the red, green and blue colorfilter patterns uses a diffraction exposure method such that the red,green and blue color filter patterns have a smaller thickness than thered, green and blue color filters.
 39. The method according to claim 35,wherein the red, green and blue color filters and the red, green andblue color filter pattern are formed of a photosensitive resin through aphotolithography process.
 40. The method according to claim 35, furthercomprising forming a second insulating layer between the thin filmtransistors and the light-shielding patterns and between the firstinsulating layer and the color filters, wherein the second insulatinglayer covers the source electrodes, the drain electrodes and the datalines.
 41. The method according to claim 35, further comprising forminga third insulating layer between the color filters and the pixelelectrodes, wherein the third insulating layer covers the color filtersand the light-shielding color filter patterns.
 42. The method accordingto claim 35, wherein a portion of each gate line acts as a firstcapacitor electrode.
 43. The method according to claim 35, whereinforming each data line includes forming a second capacitor electrode onthe first insulating layer over the portion of each gate line, whereinthe second capacitor electrode and the portion of the gate lineconstitute a storage capacitor with the first insulating layerinterposed between the portion of the gate line and the second capacitorelectrode.
 44. The method according to claim 43, wherein each of thered, green and blue color filters includes a capacitor contact holeexposing the second capacitor electrode and wherein the pixel electrodecontacts the second capacitor electrode through the capacitor contacthole.
 45. The method according to claim 35, wherein each of the red,green and blue color filters includes a drain contact hole exposing thedrain electrode and wherein the pixel electrode contacts the drainelectrode through the drain contact hole.
 46. A liquid crystal displaydevice, comprising: a plurality of gate lines formed on a firstsubstrate along a transverse direction, each gate line including a gateelectrode; a first insulating layer formed on the first substrate tocover the gate lines and the gate electrodes; a plurality of data linesformed on the first insulating layer along a longitudinal direction, thedata lines defining a plurality of pixel regions with the gate lines,each data line including a source electrode; a plurality of thin filmtransistors formed at a crossing region of the gate and data lines, thethin film transistors each including the gate electrode, a semiconductorlayer, the source electrode, and a drain electrode; a plurality of pixelelectrodes formed on the first substrate in the pixel regions andcontacting the drain electrodes; a common electrode on a secondsubstrate, the common electrode facing the first substrate; a liquidcrystal layer interposed between the common electrode and the pixelelectrodes; a plurality of color filters disposed on one of the firstand second substrates in the pixel regions, each color filter containingone of red, green and blue color resins; and a plurality oflight-shielding color filter patterns disposed on the one of the firstand second substrates such that the light-shielding color filterpatterns cover the semiconductor layers to shield the semiconductorlayers from incident light, each light-shielding color filter patternincluding at least two of the red, green and blue color resins which aredisposed sequentially between the semiconductor layer and the secondsubstrate.
 47. The device according to claim 46, wherein eachlight-shielding color filter pattern includes two of the red, green andblue color resins.
 48. The device according to claim 46, wherein eachlight-shielding color filter pattern includes three of the red, greenand blue color resins.
 49. The device according to claim 46, wherein thelight-shielding color filter pattern is formed in the satine processstep as the color filter.
 50. The device according to claim 46, whereinthe red, green and blue color filter patterns each has a thicknesssmaller than each of red, green and blue color filters, respectively.51. The device according to claim 46, wherein the light-shielding colorfilter patterns and color filters are disposed on the first substrate,and the device further comprises a second insulating layer between thethin film transistor and the light-shielding pattern and between thefirst insulating layer and the color filter, the second insulating layercovers the source electrode, the drain electrode and the data line, anda drain contact hole extends through the second insulating layer toexpose the drain electrode.
 52. The device according to claim 46,wherein the light-shielding color filter patterns and color filters aredisposed on the first substrate, and the device further comprises athird insulating layer between the color filters and the pixelelectrodes, the third insulating layer covers the color filters and thelight-shielding color filter patterns.
 53. The device according to claim51, further comprising a third insulating layer between the colorfilters and the pixel electrodes, the third insulating layer coveringthe color filters and the light-shielding color filter patterns.
 54. Thedevice according to claim 53, wherein the drain contact hole extendsthrough the third insulating layer.